Oasis Materials Corporation produces and processes various AlN metallized substrates for the electronics industry. Using a multi-layer co-fired process, Oasis metallizes AlN with Tungsten traces and vias to achieve a chemically bonded multi-layer electronic circuit.
Applications include electronic packaging, heaters with embedded resistance layers, and charged coupled devises (CCD) detectors.
|
AlN
Substrate Dimensional Tolerances and Key Features |
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|
Feature |
Attribute |
Units |
Tolerance |
Comments |
|
Substrate |
X, Y
Feature* Location |
% |
±
1 |
No
Sorting |
|
Binned
Substrates |
X, Y
Feature* Location |
% |
±
0.3 or better |
Standard
is 3 bins – classified by dimension |
|
Lapped
Substrate |
Thickness
Tolerance |
inches |
±
0.0005 |
|
|
|
Camber |
inches/inch |
0.0005 |
|
|
|
Surface
Finish |
micro
inches |
<30 |
|
|
Polished
Substrates |
Thickness
Tolerance |
inches |
±
0.0005 |
|
|
|
Camber |
inches/inch |
0.0005 |
|
|
|
Surface
Finish |
micro
inches |
<3 |
|
|
Via
Hole |
Location |
|
|
See
X, Y Feature Location |
|
|
Minimum
Diameter |
inches |
0.006 |
|
|
|
Metal
Fill |
|
|
Hermetic
Tungsten |
|
|
Plated
Thru Metal |
|
|
Nickel
or Gold |
|
Surface
Metal |
Options |
|
|
Tungsten,
Gold, Thin Film |
|
|
|
|
|
|
|
Aluminum
Nitride Material Properties |
|
|
Material Property |
OMC’s AlN Value |
|
Thermal
Conductivity |
190
W/m-K @ 20C Minimum |
|
Dielectric
Constant |
8.9 |
|
Biaxial
Strength |
45,000
psi minimum average with Weibull Modulus >=10 |
|
Thermal
Expansion Coefficient |
4.5
ppm |
Design Rules For Co-fired Aluminum Nitride Ceramic Substrates
